Breaking Moore’s law is expected! The 1 nm transistor appears – Science and technology Sohu t6570

Breaking Moore’s law is expected! The 1 nm transistor appears – Sohu technology [Technews science news] TSMC Co CEO Liu Deyin previously attended the event at the time was revealed, has composed the team started the 3 R & D, industry a surprise, and now more than 3 nm, 1 nm to! The United States Department of energy’s Laurence Berkeley National Laboratory Ali Javey team claiming that breaks through the physical limits, the successful creation of 1 nm transistor. Is generally believed that the 5 nm is beyond the physical limits of crystal silicon, but the U.S. Department of energy’s Laurence Berkeley National Laboratory, local 6 released the results of a study by scientists, Ali Javey led a team that has succeeded in creating 1 nano crystals, human hair length is about 1/100000. The research team pointed out that the process of success lies in the miniature to 1 nanometer carbon nanotubes with molybdenum disulfide (MoS2) application materials. 1 nm is about 2 ~ 3 atomic diameters, and the carbon nano tube wall only one atom thick wall tube, has long been regarded as expected to replace silicon, in order to enhance transistor performance and key material beyond Moore’s law. Often as a main component of engine lubricating oil of the molybdenum disulfide (MoS2) in recent years is regarded as new materials are widely used in nano transistor, LED, laser and solar battery, has become an important key success factors of the study. Field effect transistor and gate drain through the flow, the source of the current between the pole of the digital signal to control the formation of 0 or 1, and the nanometer process refers to the width of the gate length is. Through the flow of electronic lighter than silicon molybdenum disulfide, less resistance, the gate length at 5 nm or longer when the linewidth is the advantage, but in the line width below 5 nanometers, but will appear in quantum mechanics is called quantum tunneling effect, electronic part may penetrate the gate leakage current, and even let the transistor can not be closed cause out of control. But more than through the characteristics of silicon molybdenum disulfide, in smaller linewidth, can effectively control the electron flow. But this research is still in the preliminary stage, California is also the host of the University of California at Berkeley Electronic Engineering and computer science professor Ali Javey also pointed out that the experiment has not yet transferred to the chip, the amplification of billions of times, but Ali Javey believes that this is an inspiration, not only stopped at 5 nm Moore through the research, application of new semiconductor materials and sustained, Moore or will be able to continue. The study was also published in the 6 issue of the journal Science (Science). For more information, please pay attention to the WeChat public account: Technews science news furtherreading:相关的主题文章: